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NEC's NPN SILICON TRANSISTOR NE687M13
FEATURES
* NEW MINIATURE M13 PACKAGE: - Small transistor outline - 1.0 X 0.5 X 0.5 mm - Low profile / 0.50 mm package height - Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 14 GHz
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
0.70.05 0.5+0.1 n0.05
0.2+0.1 n0.05
0.15+0.1 n0.05
(Bottom View)
0.3
* *
0.35
1.0+0.1 n0.05
0.7
LOW NOISE FIGURE: NF = 1.4 dB at 2 GHz
2
3
W2
0.35
1
0.15+0.1 n0.05
DESCRIPTION
NEC's NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications.
0.1
0.1
0.2
0.2
0.125+0.1 n0.05
0.50.05
PIN CONNECTIONS
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE ICBO IEBO CRE PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz, Zs = Zopt VCE = 1 V, IC = 3 mA, f = 2 GHz, Zs = Zopt Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz Forward Current Gain at VCE = 2 V, IC = 20 mA, Note 2 Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz,
Note 3
NE687M13 2SC5618 M13 UNITS GHz GHz dB dB dB dB A A pF 0.4 8.5 6.0 70 MIN 9.0 7.0 TYP 14.0 12.0 1.4 1.5 10.0 9.0 130 0.1 0.1 0.8 2.0 2.0 MAX
Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal of the bridge.
California Eastern Laboratories
NE687M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation2 Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 5.0 3.0 2.0 30 90 150 -65 to +150
ORDERING INFORMATION
PART NUMBER NE687M13-A NE687M13-T3-A QUANTITY
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board.
TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
Total Power Dissipation, Ptot (mW)
Mounted on Glass Epoxy PCB 2 (1.08 cm x 1.0 mm (t) ) 250
Reverse Transfer Capacitance, Cre (pF)
300
0.6 f = 1 MHz 0.5
200
0.4
150
0.3
100
90
0.2
50
0.1
0
25
50
75
100
125
150
0
1
2
3
4
5
Ambient Temperature, TA (C)
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 VCE = 2 V
35 30 25 20 15 10 5
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
IB : 50 A step 300 A
500 A
400 A
Collector Current, IC (mA)
1
Collector Current, IC (mA)
10
0.1
200 A
0.01
100 A
0.001
IB = 50 A 1 2 3 4
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
Base to Emmiter Voltage, VBE (V)
Collector to Emmiter Voltage, VCE (V)
NE687M13 TYPICAL PERFORMANCE CURVES (TA = 25C)
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000 VCE = 2 V
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
16
Gain Bandwidth Product, fT (GHz)
14 12 10 8 6 4 2 0
VCE = 2 V f = 2 GHz
DC Current Gain, HFE
100
10 0.1
1
10
100
1
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
35 35
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB)
VCE = 1 V IC = 10 mA
VCE = 2 V IC = 10 mA
30 25 20 15 10 |S21e| 5 0 0.1
2
30 25 20 15 10 5 0 0.1 MSG MAG
MSG MAG
|S21e|
2
1
10
1
10
Frequency, f (GHz)
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20
Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB)
MSG
MAG
VCE = 2 V f = 2 GHz 15 MSG MAG 10
15
|S21e|
2
10
|S21e|
2
5 VCE = 2 V f = 1 GHz 0 1 10 100
5
0 1 10 100
Collector Current, IC (mA)
Collector Current, IC (mA)
NE687M13 TYPICAL PERFORMANCE CURVES (TA = 25C)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 VCE = 1 V f = 1 GHz 4 20
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 VCE = 2 V f = 1 GHz Ga 16 20
Associated Gain, Ga (dB)
Ga
16
4
3
12
3
12
2 NF 1
8
2 NF 1
8
4
4
0 1 10
0 100
0 1 10
0 100
Collector Current, IC (mA)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 VCE = 1 V f = 1.5 GHz 20
5
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
20 VCE = 2 V f = 1.5 GHz
Associated Gain, Ga (dB)
4
16 Ga
Ga 3 12
3
12
2 NF 1
8
2 NF 1
8
4
4
0 1 10
0 100
0 1 10
0 100
Collector Current, IC (mA)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 VCE = 1 V f = 2 GHz 20
5
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
20 VCE = 2 V f = 2 GHz
Noise Figure, NF (dB)
Noise Figure, NF (dB)
4
16
Associated Gain, Ga (dB)
4
16
3 Ga 2 NF 1
12
3 Ga
12
8
2 NF 1
8
4
4
0 1 10
0 100
0 1 10
0 100
Collector Current, IC (mA)
Collector Current, IC (mA)
Associated Gain, Ga (dB)
Associated Gain, Ga (dB)
4
16
Noise Figure, NF (dB)
Noise Figure, NF (dB)
Associated Gain, Ga (dB)
Noise Figure, NF (dB)
Noise Figure, NF (dB)
NE687M13 TYPICAL SCATTERING PARAMETERS
j50 j25 j100
+90 +135 +45
j10 10
S11 25 50 100 S22
S21 +180
0
S12 5 10 15 20 25 +0
-j10
-135
-j25 -j50 -j100
-45
Coordinates in Ohms Frequency in GHz VCE = 1 V, IC = 10 mA
-90
NE687M13 VCE = 1 V, IC = 10 mA Frequency GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.71 0.64 0.57 0.53 0.49 0.45 0.44 0.44 0.43 0.43 0.42 0.42 0.42 0.42 0.41 0.40 0.40 0.39 0.40 0.39 0.38 0.36 0.34
S11 ANG -28.83 -56.70 -77.87 -94.58 -107.39 -120.85 -129.42 -135.99 -141.83 -146.64 -153.87 -160.59 -165.22 -169.18 -172.49 179.29 171.08 161.33 152.78 146.02 141.59 138.25 134.43 MAG 21.86 19.01 16.05 13.57 11.62 9.91 8.73 7.80 7.02 6.38 5.40 4.69 4.14 3.71 3.37 2.76 2.35 2.05 1.83 1.66 1.53 1.44 1.36
S21 ANG 158.87 141.86 129.44 120.29 113.50 108.06 103.77 100.31 97.30 94.61 90.05 86.18 82.82 79.73 76.86 70.23 64.05 58.49 53.56 49.23 45.35 41.63 37.72 MAG 0.02 0.04 0.05 0.06 0.06 0.07 0.07 0.08 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.16 0.19 0.21 0.24 0.26 0.29 0.31 0.34
S12 ANG 76.89 64.05 57.48 54.28 52.33 51.39 51.70 52.15 52.52 53.11 54.26 55.29 56.05 56.51 56.83 56.91 55.87 54.71 53.37 52.04 50.81 49.38 47.54 MAG 0.86 0.75 0.63 0.54 0.47 0.37 0.33 0.30 0.28 0.26 0.23 0.21 0.19 0.18 0.17 0.16 0.17 0.18 0.20 0.22 0.23 0.23 0.23
S22 ANG -22.59 -40.78 -54.59 -64.96 -72.99 -78.86 -85.54 -90.17 -94.31 -99.34 -106.29 -113.29 -118.74 -123.68 -128.17 -136.91 -143.47 -147.06 -147.25 -144.73 -140.61 -135.48 -133.06
K
MAG1 (dB)
0.19 0.28 0.37 0.46 0.54 0.68 0.74 0.79 0.83 0.88 0.94 0.99 1.03 1.06 1.08 1.12 1.14 1.16 1.16 1.16 1.15 1.14 1.13
29.94 27.02 25.16 23.79 22.68 21.71 20.83 20.04 19.34 18.67 17.49 16.45 14.43 13.15 12.13 10.14 8.61 7.38 6.41 5.60 4.94 4.40 3.90
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE687M13 TYPICAL SCATTERING PARAMETERS
j50 j25 j100
+90 +135 +45
j10 S11 0 10 25 50 100 S22 -j10
S12 +180 S21 5 10 15 +0
-j25 -j50
-j100
Coordinates in Ohms Frequency in GHz VCE = 2 V, IC = 5 mA
-135 -90
-45
NE687M13 VCE = 2 V, IC = 5 mA Frequency GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.86 0.81 0.76 0.70 0.65 0.58 0.54 0.52 0.49 0.48 0.45 0.43 0.41 0.40 0.39 0.37 0.36 0.35 0.34 0.34 0.34 0.32 0.30
S11 ANG -14.28 -31.85 -46.05 -59.23 -70.68 -82.92 -91.97 -99.97 -107.10 -113.24 -123.52 -132.69 -139.56 -145.30 -150.12 -161.26 -171.52 176.69 166.32 158.42 153.42 150.03 146.33 MAG 13.53 12.83 11.91 10.91 9.95 8.87 8.07 7.39 6.76 6.24 5.38 4.72 4.20 3.78 3.45 2.84 2.42 2.12 1.88 1.70 1.56 1.46 1.38
S21 ANG 167.49 155.13 144.78 135.97 128.54 121.33 116.01 111.61 107.73 104.20 98.29 93.40 89.17 85.45 82.00 74.35 67.39 61.12 55.53 50.63 46.37 42.49 38.57 MAG 0.02 0.04 0.05 0.06 0.07 0.08 0.08 0.09 0.09 0.10 0.11 0.11 0.12 0.13 0.14 0.16 0.18 0.20 0.22 0.23 0.25 0.27 0.30
S12 ANG 80.25 71.73 65.56 60.40 56.24 52.47 50.58 49.44 48.55 47.85 47.62 47.64 48.14 48.60 49.16 50.11 50.31 50.27 49.84 49.50 49.25 48.86 48.07 MAG 0.94 0.89 0.82 0.75 0.68 0.58 0.53 0.48 0.44 0.41 0.36 0.32 0.29 0.27 0.25 0.22 0.21 0.22 0.23 0.26 0.28 0.30 0.31
S22 ANG -11.88 -22.74 -32.21 -39.96 -46.33 -49.51 -54.17 -57.43 -59.80 -63.07 -66.56 -70.62 -73.13 -75.54 -77.78 -83.87 -91.33 -98.64 -104.18 -106.91 -106.70 -104.89 -104.37
K
MAG1 (dB)
0.14 0.17 0.22 0.28 0.34 0.47 0.52 0.57 0.62 0.66 0.75 0.82 0.88 0.94 0.98 1.07 1.12 1.15 1.17 1.18 1.17 1.16 1.15
28.47 25.34 23.61 22.37 21.38 20.54 19.81 19.16 18.56 18.02 17.05 16.19 15.41 14.70 14.05 11.05 9.30 7.96 6.92 6.08 5.40 4.85 4.35
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE687M13 TYPICAL SCATTERING PARAMETERS
j50 j25 j100
+135 +45
+90
j10 S11 0 10 25 50 100 S22 -j10
-135 -45 Coordinates in Ohms Frequency in GHz VCE = 2 V, IC = 20 mA +180 S21 S12 10 20
30
40 +0
-j25 -j50
-j100
-90
NE687M13 VCE = 2 V, IC = 20 mA Frequency GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.57 0.50 0.45 0.42 0.40 0.37 0.37 0.37 0.37 0.36 0.37 0.37 0.37 0.37 0.36 0.36 0.35 0.35 0.36 0.36 0.35 0.33 0.31
S11 ANG -36.15 -67.88 -90.13 -106.56 -118.50 -131.65 -139.21 -144.73 -149.66 -153.80 -159.66 -165.38 -169.31 -172.61 -175.37 177.29 169.69 160.03 151.53 144.75 140.37 137.20 133.76 MAG 31.49 25.71 20.68 16.96 14.25 12.07 10.55 9.37 8.41 7.62 6.43 5.56 4.90 4.39 3.98 3.24 2.75 2.39 2.12 1.92 1.76 1.65 1.55
S21 ANG 154.52 135.92 123.67 115.24 109.26 104.60 100.88 97.86 95.24 92.90 88.88 85.48 82.45 79.67 77.07 70.97 65.26 60.01 55.28 51.05 47.24 43.56 39.78 MAG 0.01 0.03 0.03 0.04 0.05 0.05 0.06 0.06 0.07 0.07 0.08 0.09 0.10 0.11 0.13 0.15 0.18 0.21 0.23 0.25 0.28 0.30 0.33
S12 ANG 71.95 66.14 60.45 59.44 59.55 60.02 60.94 61.83 62.31 62.97 63.94 64.61 64.72 64.87 64.81 63.80 62.10 60.09 58.20 56.51 54.88 53.20 51.20 MAG 0.81 0.67 0.54 0.46 0.39 0.30 0.26 0.24 0.21 0.20 0.17 0.15 0.14 0.13 0.12 0.11 0.12 0.14 0.16 0.18 0.20 0.21 0.21
S22 ANG -25.05 -43.58 -56.22 -64.85 -71.22 -75.54 -81.03 -84.22 -87.05 -91.25 -96.57 -102.15 -106.18 -109.91 -113.45 -121.12 -128.22 -133.08 -134.34 -132.06 -127.09 -120.86 -117.44
K 0.34 0.42 0.54 0.64 0.71 0.84 0.89 0.92 0.95 0.98 1.02 1.05 1.07 1.08 1.09 1.11 1.12 1.12 1.12 1.12 1.11 1.10 1.09
MAG1 (dB) 33.26 29.76 27.77 26.19 24.88 23.77 22.75 21.84 21.02 20.26 18.15 16.47 15.17 14.10 13.16 11.27 9.76 8.53 7.54 6.71 6.03 5.48 4.95
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 06/13/2002
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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